Electrolyte gate-controlled Kondo effect in SrTiO3.

Atomic-layer-deposited LaAlO3/SrTiO3 all oxide field-effect transistors

We have demonstrated well-behaved accumulation-mode all oxide NMOSFETs with amorphous atomic-layer-deposited (ALD) LaAlO3 gate dielectric stacks on crystalline SrTiO3 substrates. A maximum drain current exceeding 10 mA/mm has been obtained on a 3.75μm-gate-length device, proving a very conductive channel can be formed at the oxide-oxide interface. Four different gate dielectric stacks, which ar...

Photoinduced modulation and relaxation characteristics in LaAlO3/SrTiO3 heterointerface

We report the modulation and relaxation characteristics in the two-dimensional electron gas system at LaAlO3/SrTiO3 heterointerface induced by the ultraviolet light illumination (365 nm). The suppression of Kondo effect at the interface illuminated by the light originates from the light irradiation-induced decoherence effect of localized states. It is interesting to note that the persistent and...

HOW THE KONDO EFFECT CAN EXIST IN Gd INTERMETALLIC COMPOUNDS

Based on the crystal and magnetic structural properties of some Gd intermetallic compounds, it is shown that with increasing conduction electron concentration, Gd experiences electronic and magnetic instability, and that these behaviors point to the appearance of Kondo Lattice. We suggest that the conduction electrons have gained local character. It is shown that Kondo effect should be observed...

Field-effect transistor on SrTiO3 with sputtered Al2O3 gate insulator

Characterization and simulation of electrolyte-gated organic field-effect transistors.

In this work we fabricate and characterize field-effect transistors based on the solution-processable semiconducting polymer poly(3-hexylthiophene) (P3HT). Applying two independent gate potentials to the electrolyte-gated organic field-effect transistor (EGOFET), by using a conventional SiO(2) layer as the back-gate dielectric and the electrolyte-gate as the top-gate, allows the measurement of ...